Interpolated Si mass attenuation coefficient values from XCOM and FFAST and experimental data of [46] C M Heirwegh I Pradler J L Campbell 10.6084/m9.figshare.1012790.v1 https://iop.figshare.com/articles/figure/_Interpolated_Si_mass_attenuation_coefficient_values_from_XCOM_and_FFAST_and_experimental_data_of_a_/1012790 <p><strong>Figure 3.</strong> Interpolated Si mass attenuation coefficient values from XCOM and FFAST and experimental data of [<a href="http://iopscience.iop.org/0953-4075/46/18/185602/article#jpb474010bib46" target="_blank">46</a>].</p> <p><strong>Abstract</strong></p> <p>Proton-induced x-ray emission (PIXE) was used to assess the accuracy of the National Institute of Standards and Technology XCOM and FFAST photo-ionization cross-section databases in the low energy region (1–2 keV) for light elements. Characteristic x-ray yields generated in thick samples of Mg, Al and Si in elemental and oxide form, were compared to fundamental parameters computations of the expected x-ray yields; the database for this computation included XCOM attenuation coefficients. The resultant PIXE instrumental efficiency constant was found to differ by 4–6% between each element and its oxide. This discrepancy was traced to use of the XCOM Hartree–Slater photo-electric cross-sections. Substitution of the FFAST Hartree–Slater cross-sections reduced the effect. This suggests that for 1–2 keV x-rays in light element absorbers, the FFAST predictions of the photo-electric cross-sections are more accurate than the XCOM values.</p> 2013-09-06 00:00:00 XCOM values FFAST predictions kev si oxide form Hartree light elements XCOM attenuation coefficients light element absorbers pixe yield National Institute Technology XCOM parameters computations Atomic Physics Molecular Physics