Fitted Si K x-ray spectrum showing data, fit functions and total fit (χ<sup>2</sup> = 0.86)
C M Heirwegh
I Pradler
J L Campbell
10.6084/m9.figshare.1012789.v1
https://iop.figshare.com/articles/figure/_Fitted_Si_K_x_ray_spectrum_showing_data_fit_functions_and_total_fit_sup_2_sup_0_86_/1012789
<p><strong>Figure 2.</strong> Fitted Si K x-ray spectrum showing data, fit functions and total fit (χ<sup>2</sup> = 0.86).</p> <p><strong>Abstract</strong></p> <p>Proton-induced x-ray emission (PIXE) was used to assess the accuracy of the National Institute of Standards and Technology XCOM and FFAST photo-ionization cross-section databases in the low energy region (1–2 keV) for light elements. Characteristic x-ray yields generated in thick samples of Mg, Al and Si in elemental and oxide form, were compared to fundamental parameters computations of the expected x-ray yields; the database for this computation included XCOM attenuation coefficients. The resultant PIXE instrumental efficiency constant was found to differ by 4–6% between each element and its oxide. This discrepancy was traced to use of the XCOM Hartree–Slater photo-electric cross-sections. Substitution of the FFAST Hartree–Slater cross-sections reduced the effect. This suggests that for 1–2 keV x-rays in light element absorbers, the FFAST predictions of the photo-electric cross-sections are more accurate than the XCOM values.</p>
2013-09-06 00:00:00
XCOM values
parameters computations
kev
si
oxide form
Hartree
light elements
FFAST predictions
XCOM attenuation coefficients
light element absorbers
pixe
National Institute
Technology XCOM
yield
Atomic Physics
Molecular Physics